Two-dimensional carrier mapping at the nanometer-scale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

Eyben, Pierre; Clarysse, Trudo; Mody, Jay; Nazir, Aftab; Schulze, Andreas; Hantschel, Thomas; Vandervorst, Wilfried

doi:10.1016/j.sse.2011.10.023

Two-dimensional carrier mapping at the nanometer-scale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

Author:

Eyben, Pierre

Clarysse, Trudo ; Mody, Jay ; Nazir, Aftab ; Schulze, Andreas ; Hantschel, Thomas ; Vandervorst, Wilfried

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, AFM, SSRM, TCAD, Metrology, MOS, DIAMOND, 0204 Condensed Matter Physics, 0205 Optical Physics, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 5104 Condensed matter physics

Abstract:

This work presents the properties and applications of high vacuum scanning spreading resistance microscopy (HV-SSRM) for two-dimensional carrier profiling. Characteristics of this concept in terms of spatial resolution and dopant gradient resolution as well as in terms of concentration sensitivity and quantification procedures are briefly presented. Insight in process optimization and junction engineering is demonstrated by linking the carrier profiles extracted from HV-SSRM technique with electrical device characteristics for a laser-only annealed p-MOSFET lot targeting the 32 nm node. © 2011 Elsevier Ltd. All rights reserved.