ITEM METADATA RECORD
Title: TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
Authors: Xie, Qi ×
Musschoot, Jan
Schaekers, Marc
Caymax, Liesbeth
Delabie, Annelies
Lin, Dennis
Qu, Xin-Ping
Jiang, Yu-Long
Van den Berghe, Sven
Detavernier, Christophe #
Issue Date: 2011
Publisher: The Electrochemical Society
Series Title: Electrochemical and Solid-State Letters vol:14 issue:5 pages:G27-G30
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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