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Title: High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Authors: Mitard, Jerome ×
De Jaeger, Brice
Eneman, Geert
Dobbie, Andrew
Myronov, M
Kobayashi, Masaharu
Geypen, Jef
Bender, Hugo
Vincent, Benjamin
Krom, Raymond
Franco, Jacopo
Winderickx, Gillis
Vrancken, Evi
Vanherle, Wendy
Wang, Wei-E
Tseng, Joshua
Loo, Roger
De Meyer, Kristin
Caymax, Matty
Pantisano, Luigi
Leadley, D.R
Meuris, Marc
Absil, Philippe
Biesemans, Serge
Hoffmann, Thomas Y #
Issue Date: Apr-2011
Publisher: Publication Board, Japanese Journal of Applied Physics
Series Title: Japanese Journal of Applied Physics 1, Regular Papers, Short Notes & Review Papers vol:50 issue:4 pages:04DC17
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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