Author:

Keywords:

Science & Technology, Physical Sciences, Technology, Electrochemistry, Engineering, Electrical & Electronic, Engineering, ELECTRICAL PERFORMANCE, LEAKAGE CURRENT, GERMANIUM, SILICON, DEVICES, SIGE, 4008 Electrical engineering, 4017 Mechanical engineering, 4018 Nanotechnology

Abstract:

In this work, the temperature behaviour of trap-assisted tunneling in Ge pFET junctions selectively grown in STI substrates is evaluated. The experimental results are compared with the TAT model for Si proposed by Hurkx et al. (1), where several parameters (such as the effective mass and trap level values) are adapted in order to obtain the best agreement between the model and the experimental results. ©The Electrochemical Society.