Title: Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Authors: Vincent, Benjamin ×
Shimura, Y
Takeuchi, Shotaro
Nishimura, T
Eneman, Geert
Firrincieli, Andrea
Demeulemeester, Jelle
Vantomme, André
Clarysse, Trudo
Nakatsuka, O
Zaima, S
Dekoster, Johan
Caymax, Matty
Loo, Roger #
Issue Date: Apr-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:4 pages:342-346
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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