Title: Inelastic electron tunneling spectroscopy of HfO_2 gate stacks: a study based on first-principles modeling
Authors: Scalise, Emilio ×
Houssa, Michel
Pourtois, Geoffrey
Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: 26-Sep-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:99 issue:13 pages:132101
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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