Title: ToF-SIMS and XPS study of ion implanted 248 nm deep ultraviolet (DUV) photoresist
Authors: Franquet, A ×
Tsvetanova, Diana
Conard, T.
Vos, Rita
Vereecke, Guy
Mertens, Paul
Heyns, Marc
Vandervorst, Wilfried #
Issue Date: May-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:5 pages:677-679
Conference: International Workshop on Materials for Advanced Metallization (MAM 2010) Mechelen, BELGIUM, MAR 07-10, 2010
Abstract: Arsenic implanted 248 nm DUV photoresist films were characterized by ToF-SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy and dose. The elemental and chemical changes induced by various implant doses and implant energies were investigated. Emphasis was put on the effect of the aging time on the composition of the ion implanted photoresist. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Department of Materials Engineering - miscellaneous
Structural Composites and Alloys, Integrity and Nondestructive Testing
× corresponding author
# (joint) last author

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