Title: Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
Authors: Carter, R.J. ×
Cartier, E.
Kerber, A.
Pantisano, L.
Schram, T.
De Gendt, Stefan
Heyns, Marc #
Issue Date: Jan-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:83 issue:3 pages:533-535
Abstract: We demonstrate that a forming gas annealing temperature of 520 degreesC significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to annealing at 420 degreesC normally used for SiO2/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO2 preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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