Title: High mobility short-channel p-type organic transistors with reduced gold content and completely gold-free source/drain bottom contacts
Authors: Muller, R ×
Smout, S
Rolin, C
Genoe, Jan
Heremans, Paul #
Issue Date: Jul-2011
Publisher: Elsevier Science
Series Title: Organic Electronics vol:12 issue:7 pages:1227-1235
Abstract: Pure gold layers are traditionally used for the fabrication of source/drain bottom contacts of high performance short channel pentacene transistors. In this work, these layers are successfully replaced by low cost metallic bilayers, consisting of a thick aluminum layer with a good electrical conductivity covered by a thin noble metal layer (gold or palladium) providing good charge injection into the organic semiconductor. Corresponding pentacene transistors with 5 mu m channel length achieve saturation mobilities in the range of 0.4-0.5 cm(2)/(V s), comparable to those of reference pentacene transistors based on 30 nm thick pure gold bottom contacts, but for a metal cost down to 5% of that of the reference transistors. (C) 2011 Elsevier B.V. All rights reserved.
ISSN: 1566-1199
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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