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Title: Interfacial reactions in a HfO2/TiN/poly-Si gate stack
Authors: MacKenzie, M ×
Craven, AJ
McComb, DW
De Gendt, Stefan #
Issue Date: Jan-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:88 issue:19 pages:-
Abstract: Interface reactions are investigated in a Si(100)/SiO2/HfO2/TiN/poly-Si gate stack using electron-energy-loss spectroscopy. The electron-energy-loss near-edge fine structure on the core edges shows evidence of interface reactions having occurred between the TiN metal gate and surrounding layers. A Si(O,N) phase is observed at the TiN/poly-Si interface. (c) 2006 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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