Title: HfSiO Bulk Trap Density Controls the Initial Vth in nMOSFETs
Authors: Sahhaf, S ×
Degraeve, R
Srividya, V
De Brabanter, Kris
Schram, T
Gilbert, M
Vandervorst, Wilfried
Groeseneken, Guido #
Issue Date: 2012
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Device and Materials Reliability vol:12 issue:2 pages:323-334
ISSN: 1530-4388
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - STADIUS, Stadius Centre for Dynamical Systems, Signal Processing and Data Analytics
Nuclear and Radiation Physics Section
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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