Kauerauf, Thomas Degraeve, Robin Ragnarsson, Lars-Ake Roussel, Philippe Sahhaf, Sahar Groeseneken, Guido O'Connor, Robert #
2011 ieee international reliability physics symposium (irps) pages:-
49th Annual IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, APR 10-14, 2011
Measuring and understanding TDDB reliability in sub-1nm EOT dielectrics is both a practical and scientific challenge. We present three different methods for the experimental determination of the SBD and wearout parameters needed to construct an all-in-one TDDB reliability prediction consisting of a SBD-free region, a leakage current-dominated region and a HBD-limited region. We demonstrate these methods on several sub-1nm EOT high-k/metal gate nMOS and pMOS devices and evaluate their advantage and disadvantages. We also discuss the validity and interpretation of the SBD/wearout model, confronting it with experiments that demonstrate how SBD paths can be annealed by reversing the stress polarity.