Title: Methodologies for sub-1nm EOT TDDB evaluation
Authors: Kauerauf, Thomas
Degraeve, Robin
Ragnarsson, Lars-Ake
Roussel, Philippe
Sahhaf, Sahar
Groeseneken, Guido
O'Connor, Robert #
Issue Date: 2011
Publisher: Ieee
Host Document: 2011 ieee international reliability physics symposium (irps) pages:-
Conference: 49th Annual IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, APR 10-14, 2011
Abstract: Measuring and understanding TDDB reliability in sub-1nm EOT dielectrics is both a practical and scientific challenge. We present three different methods for the experimental determination of the SBD and wearout parameters needed to construct an all-in-one TDDB reliability prediction consisting of a SBD-free region, a leakage current-dominated region and a HBD-limited region. We demonstrate these methods on several sub-1nm EOT high-k/metal gate nMOS and pMOS devices and evaluate their advantage and disadvantages. We also discuss the validity and interpretation of the SBD/wearout model, confronting it with experiments that demonstrate how SBD paths can be annealed by reversing the stress polarity.
ISBN: 978-1-4244-9111-7
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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