2011 ieee international reliability physics symposium (irps) pages:-
49th Annual IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, APR 10-14, 2011
We study the properties of a single gate oxide trap subjected to AC Bias Temperature Instability (BTI) stress conditions by means of Time Dependent Defect Spectroscopy. A theory for predicting the occupancy of a single trap after AC stress is developed based on first order kinetics and verified on experimental data. The developed theory can be used to develop circuit simulators and predict time dependent variability.