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Title: Probabilistic defect occupancy model for NBTI
Authors: Martin-Martinez, J
Kaczer, B
Toledano-Luque, M
Rodriguez, R
Nafria, M
Aymerich, X
Groeseneken, Guido
Issue Date: 2011
Publisher: Ieee
Host Document: 2011 ieee international reliability physics symposium (irps) pages:-
Conference: 49th Annual IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, APR 10-14, 2011
Abstract: A new Negative Bias Temperature Instability (NBTI) model based on the probability of charge/discharge of defects in devices is presented. The model correctly describes the main experimental NBTI features, such as the threshold voltage shift (Delta V-T) evolution under DC or AC stresses, its frequency and duty cycle dependence and the statistical Delta V-T distribution in small transistors. Finally, the model is used to explain the dependence of NBTI degradation on the stress/relaxation times, frequency and duty cycle in terms of defect occupancy.
ISBN: 978-1-4244-9111-7
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors

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