Martin-Martinez, J Kaczer, B Toledano-Luque, M Rodriguez, R Nafria, M Aymerich, X Groeseneken, Guido
2011 ieee international reliability physics symposium (irps) pages:-
49th Annual IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, APR 10-14, 2011
A new Negative Bias Temperature Instability (NBTI) model based on the probability of charge/discharge of defects in devices is presented. The model correctly describes the main experimental NBTI features, such as the threshold voltage shift (Delta V-T) evolution under DC or AC stresses, its frequency and duty cycle dependence and the statistical Delta V-T distribution in small transistors. Finally, the model is used to explain the dependence of NBTI degradation on the stress/relaxation times, frequency and duty cycle in terms of defect occupancy.