2011 ieee international reliability physics symposium (irps) pages:-
49th Annual IEEE International Reliability Physics Symposium (IRPS) Monterey, CA, APR 10-14, 2011
The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide traps, especially at high transverse electric field. These created defects degrade the cell endurance. Moreover, this degradation is enhanced for shorter channel devices and narrower fin widths, which would be a limitation for the scaling of floating body RAM.