Title: Recent trends in bias temperature instability
Authors: Kaczer, B ×
Grasser, T
Franco, Jacopo
Toledano-Luque, M
Roussel, Ph. J
Cho, M
Simoen, Eddy
Groeseneken, Guido #
Issue Date: Jan-2011
Publisher: Published for the Society by the American Institute of Physics
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:29 issue:1 pages:-
Article number: 01AB01
Abstract: Several trends occurring in the past few years in our understanding of bias temperature instability (BTI) are reviewed. Among the most important is the shift toward analyzing BTI relaxation with the tools originally developed for describing low-frequency noise. This includes the interpretation of the time, temperature, voltage, and duty cycle dependences. It is shown that a wealth of information about gate oxide defect properties can be obtained from deeply scaled devices and correctly modeled based on nonradiative multiphonon theory. It is then shown how detailed understanding of individual defect properties can allow interpreting the variability issues of future complementary metal-oxide semiconductor technologies. This is complemented by showing the most promising technological solutions for BTI. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3521505]
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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