Title: OFF-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices
Authors: Griffoni, Alessio ×
Chen, Shih-Hung
Thijs, Steven
Kaczer, Ben
Franco, Jacopo
Linten, Dimitri
De Keersgieter, An
Groeseneken, Guido #
Issue Date: Jul-2011
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Electron Devices vol:58 issue:7 pages:2061-2071
Abstract: The OFF-state degradation of n-channel laterally diffused metal-oxide-semiconductor (MOS) silicon-controlled-rectifier electrostatic-discharge (ESD) devices for high-voltage applications in standard low-voltage complementary MOS technology is studied. Based on experimental data and technology computer-aided design simulations, impact ionization induced by conduction-band electrons tunneling froman n(+) poly-Si gate to an n-well is identified to be the driving force of device degradation. Device optimization is proposed, which improves both OFF-state and ESD reliability.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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