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Title: Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-k-Based Devices
Authors: Amat, Esteve ×
Kauerauf, Thomas
Degraeve, Robin
Rodriguez, Rosana
Nafria, Montserrat
Aymerich, Xavier
Groeseneken, Guido #
Issue Date: Mar-2011
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Device and Materials Reliability vol:11 issue:1 pages:92-97
Abstract: In ultrascaled complimentary metal-oxide-semiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric (SiO2 or high-k). A new model to describe the CHC degradation behavior in n-channel metal-oxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high-k or SiO2 as a dielectric.
ISSN: 1530-4388
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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