IEEE Transactions on Electron Devices vol:58 issue:3 pages:631-640
A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast V-TH-evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or erase conditions. The following different structures are investigated: 1) SiO2/high-k stacks; 2) charge trap memories; 3) and floating gate memories. Dielectrics targeted for Flash memory applications are used as charge trap layers and interpoly dielectrics. In this paper, we show results on Al2O3, DyScO, GdScO, and hexagonal and perovskite LuAlO. The postprogram and post-erase curves hold useful information about the dielectric properties and are used as a fast screening technique for alternative materials.