Title: Study of nitrogen impact on V-FB-EOT roll-off by varying interfacial SiO2 thickness
Authors: Cho, Moonju ×
Akheyar, Amal
Aoulaiche, Marc
Degraeve, Robin
Ragnarsson, Lars-Ake
Tseng, Joshua
Hoffmann, Thomas Y
Groeseneken, Guido #
Issue Date: Aug-2011
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:62 issue:1 pages:67-71
Abstract: Flat band voltage (V-FB) roll-off in long channel devices at thin equivalent oxide thickness (EOT) is studied on SiO2/nitrided-HfSiO stacks. V-FB increases when SiO2 interfacial layer thickness decreases, and charges pumping (CP) frequency sweep analysis shows higher trap density near Si/SiO2 interface. Based on this observation, an atomic diffusion model is introduced. Higher concentration of nitrogen atom in the HfSiO(N) layer diffuses to the Si/SiO2 interface through the SiO2 layer in thinner SiO2 device, and accumulates near Si/SiO2 interface which can introduce higher density of interfacial traps. Lifetime extracted from negative bias temperature instability (NBTI), and mobility are also degraded in thinner SiO2 devices due to the higher interfacial trap density.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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