Title: Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric
Authors: Cho, Moonju ×
Aoulaiche, Marc
Degraeve, Robin
Kaczer, Ben
Kauerauf, Thomas
Ragnarsson, Lars-Ake
Adelmann, Christoph
Van Elshocht, Sven
Hoffmann, Thomas Y
Groeseneken, Guido #
Issue Date: Sep-2011
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:63 issue:1 pages:5-7
Abstract: The reliability of 0.69 nm EOT GdHfO dielectric with metal gate is investigated. The threshold voltage shift at identical PBTI stress conditions is only 20% of the shift of a 0.78 nm EOT HfO2 + La2O3 (or HfLaO) device. The resulting reliable gate over-drive at 10 years of this GdHfO device is 0.85 V. Analysis of the stress induced leakage current (SILC) shows that the improved PBTI in the GdHfO device is related to the reduced trap generation under low bias stress, which already exists in the HfLaO device. (C) 2011 Elsevier Ltd. All rights reserved.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science