Title: Impact of field-induced quantum confinement in tunneling field-effect devices
Authors: Vandenberghe, William G ×
Soree, Bart
Magnus, Wim
Groeseneken, Guido
Fischetti, Massimo V #
Issue Date: Apr-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:98 issue:14 pages:-
Article number: 143503
Abstract: Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573812]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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