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Title: Impact of halo implant on the hot carrier reliability of germanium p-channel metal-oxide-semiconductor field-effect transitors
Authors: Franco, Jacopo ×
Eneman, Geert
Kaczer, B
Mitard, J
De Jaeger, B
Groeseneken, Guido #
Issue Date: Jan-2011
Publisher: Published for the Society by the American Institute of Physics
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:29 issue:1 pages:-
Article number: 01A804
Abstract: Hot carrier (HC) reliability of Si-passivated, Ge channel, p-channel metal-oxide-semiconductor field-effect transitors (pMOSFETs) with a physical gate length of 70 nm is investigated in this article. HCs are reported to affect the reliability of these devices more than negative bias temperature instability, which is normally considered as the most serious reliability concern for Si p-channel field effect transistors. The impact of different halo implant conditions on the HC reliability of Ge pMOSFETs is then studied. High energy and high dose halo implants, while being very effective for threshold voltage adjustment of short-channel devices, can remarkably reduce device lifetime under HC stress condition due to the enhanced electric field peak near the drain side of the channel. HC reliability, therefore, should be carefully taken into account when optimizing halo implant conditions for Ge p-channel metal-oxide-semiconductor. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3520647]
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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