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Title: A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-V-t single-metal-single-dielectric gate stack
Authors: Chang, V. S
Ragnarsson, L. -A
Pourtois, G
O'Connor, R
Adelmann, C
Van Elshocht, S
Delabie, Annelies
Swerts, J
Van der I-Leyden, N
Conard, T
Cho, H. -J
Akheyar, A
Mitsuhashi, R
Witters, T
O'Sullivan, B. J
Pantisano, L
Rohr, E
Lelmen, P
Kubicek, S
Schram, T
De Gendt, Stefan
Absil, P. P
Biesemans, S #
Issue Date: 2007
Publisher: Ieee
Host Document: 2007 ieee international electron devices meeting, vols 1 and 2 pages:535-538
Series Title: International Electron Devices Meeting
Conference: IEEE International Electron Devices Meeting Washington, DC, DEC 10-12, 2007
Abstract: We show for the first time that conduction and valence band-edge effective work functions (WF) are achieved simultaneously by one single Dy2O3 capping layer on HfO2 for both nMOS and pMOS with TaCx-based metals. Low V-t's (0.23 and -0.36 V) are obtained without degrading the EOT-J(G) scalability and hole mobility. A model based on competing intermixes of cap/host dielectric and cap/metal is proposed to explain the positive WIT shift with TaCxNy and the negative shift with TaCx as compared to the uncapped HfO2 reference. Finally, by developing a novel nitridation process to modify TaCx into TaCxNy, this work shows that single-metal-single-dielectric gate stacks are feasible, allowing cost-effective low-V-t CMOS integration.
ISBN: 978-1-4244-1507-6
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Molecular Design and Synthesis
# (joint) last author

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