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Title: Analysis of hafnium containing powders and thin films for CMOS device applications - art. no. 012003
Authors: McGilvery, C. M
McComb, D. W
MacKenzie, M
Craven, A. J
McFadzean, S
De Gendt, Stefan #
Issue Date: 2008
Publisher: Iop publishing ltd
Host Document: Emag: electron microscopy and analysis group conference 2007 vol:126 pages:12003-12003
Series Title: JOURNAL OF PHYSICS CONFERENCE SERIES
Conference: Electron Microscopy and Analysis Group Conference Glasgow, SCOTLAND, SEP 03-07, 2007
Abstract: As the SiO2 or Si(O,N) layer in complementary metal oxide semiconductor (CMOS) devices reaches its atomic limits it is necessary to find suitable materials that will allow further device scaling. Leading candidate materials include hafnia and hafnium silicate; however, issues remain regarding their stability which must be resolved. This paper highlights some of these issues in hafnium-containing gate stacks. Hafnium silicate bulk powders were investigated to gain a better understanding of the chemistry and crystallisation processes involved. This was done using x-ray diffraction, thermal analysis, transmission electron microscopy and electron energy-loss spectroscopy.
URI: 
ISBN: *****************
ISSN: 1742-6588
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Molecular Design and Synthesis
# (joint) last author

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