Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate
MacKenzie, M Craven, A. J McComb, D. W McGilvery, C. M McFadzean, S De Gendt, Stefan #
Microscopy of semiconducting materials 2007 vol:120 pages:313-316
SPRINGER PROCEEDINGS IN PHYSICS
15th Conference on Microscopy of Semiconducting Materials Cambridge, ENGLAND, APR 02-05, 2007
A Si(100)/SiO2/HfSiO/TaN/poly-Si gate stack is investigated using analytical electron microscopy and, in particular, electron energy-loss spectroscopy. Oxygen is shown to be present in the TaN layer and at the TaN/poly-Si interface in the form of oxidised TaN and SiO2, respectively. Phase separation of the HfSiO into crystalline HfO2 and amorphous SiO2 is also observed with a resulting widening of the SiO2 layer.