Title: Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate
Authors: MacKenzie, M
Craven, A. J
McComb, D. W
McGilvery, C. M
McFadzean, S
De Gendt, Stefan #
Issue Date: 2008
Publisher: Springer-verlag berlin
Host Document: Microscopy of semiconducting materials 2007 vol:120 pages:313-316
Conference: 15th Conference on Microscopy of Semiconducting Materials Cambridge, ENGLAND, APR 02-05, 2007
Abstract: A Si(100)/SiO2/HfSiO/TaN/poly-Si gate stack is investigated using analytical electron microscopy and, in particular, electron energy-loss spectroscopy. Oxygen is shown to be present in the TaN layer and at the TaN/poly-Si interface in the form of oxidised TaN and SiO2, respectively. Phase separation of the HfSiO into crystalline HfO2 and amorphous SiO2 is also observed with a resulting widening of the SiO2 layer.
ISBN: 978-1-4020-8614-4
ISSN: 0930-8989
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Molecular Design and Synthesis
# (joint) last author

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