Nucleation, Crystallisation and Phase Segregation in HfO2 and HfSiO
McGilvery, C. M McFadzean, S MacKenzie, M Docherty, F. T Craven, A. J McComb, D. W De Gendt, Stefan #
Microscopy of semiconducting materials 2007 vol:120 pages:325-328
SPRINGER PROCEEDINGS IN PHYSICS
15th Conference on Microscopy of Semiconducting Materials Cambridge, ENGLAND, APR 02-05, 2007
Hafnia and hafnium silicate thin films and bulk powders were analysed using thermal analysis, X-ray diffraction and transmission electron microscope techniques to improve understanding of the crystallisation mechanism of the dielectric material. It was found that thin films exhibit instability under device processing conditions. Starting precursors greatly affect the crystallisation pathway in the bulk materials. By studying these phenomena a better understanding of the chemistry involved during crystallisation can be gained.