Title: Low VTCMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Authors: Kubicek, S
Schram, T
Paraschiv, V
Vos, R
Demand, M
Adelmann, C
Witters, T
Nyns, Laura
Ragnarsson, L. -A
Yu, H
Veloso, A
Singanamalla, Ragunath
Kauerauef, T
Rohr, E
Brus, S
Vrancken, C
Chang, V. S
Mitsuhashi, R
Akheyar, A
Cho, H. -J
Hooker, J. C
O'Sullivan, B. J
Chiarella, T
Kerner, C
Delabie, Annelies
Van Elshocht, S
De Meyer, Kristin
De Gendt, Stefan
Absil, P
Hoffmann, T
Biesemans, S #
Issue Date: 2007
Publisher: Ieee
Host Document: 2007 ieee international electron devices meeting, vols 1 and 2 pages:49-52
Series Title: International Electron Devices Meeting
Conference: IEEE International Electron Devices Meeting Washington, DC, DEC 10-12, 2007
Abstract: A gate-first process was used to fabricate CMOS circuits with high performing high-kappa and metal gate transistors. Symmetric low V-T values of +/-0.25V and unstrained I-DSAT of 1035/500 mu A/mu m for nMOS/pMOS at I-OFF=100nA/mu m and vertical bar V-DD vertical bar=1.1V are demonstrated on a single wafer. This was achieved using Hf-based high-k dielectrics with La (nMOS) and Al (pMOS) doping, in combination with a laser-only activation anneal to maintain band-edge EWF and minimal EOT re-growth. The laser-only anneal further results in improved L-G scaling of 15 nm and a 2 angstrom T-INV reduction over the spike reference.
ISBN: 978-1-4244-1507-6
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Molecular Design and Synthesis
Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science