Title: Atomic layer deposition of Al2O3 on S-passivated Ge
Authors: Sioncke, S ×
Ceuppens, J
Linders, D.
Nyns, L
Delabie, Annelies
Struyf, H
De Gendt, Stefan
Mueller, M
Beckhoff, B
Caymax, M #
Issue Date: Jul-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:7 pages:1553-1556
Conference: 17th International Conference on Insultating Films on Semiconductors Grenoble, FRANCE, JUN 21-24, 2011
Abstract: In this paper we present the study of the S-passivation of the Ge gate stack. S-passivation was achieved by using H2S exposure on the clean Ge(1 0 0) surface. Al2O3 was deposited on the Ge/S surface by atomic layer deposition (ALD). The resulting gate stacks were analyzed chemically and electrically. We studied the influence of the ALD oxidant precursor (H2O versus O-3) on the passivation behavior of the gate stack. We observe that for the same surface passivation, the interface depends largely on the oxidant precursor: H2O as a precursor results in a gate stack free of Ge-oxide and the gate stack shows low D-it at the valence band edge. On the other hand, O-3 as a precursor results in a thin GeOxSy), interfacial layer with low D-it at the mid gap and conduction band edge. (C) 2011 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Research Center Insurance, Leuven
× corresponding author
# (joint) last author

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