Title: S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
Authors: Sioncke, S ×
Lin, Dennis
Nyns, L
Brammertz, G
Delabie, Annelies
Conard, T
Franquet, A
Rip, J
Struyf, H
De Gendt, Stefan
Mueller, M
Beckhoff, B
Caymax, M #
Issue Date: Oct-2011
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:110 issue:8 pages:-
Article number: 084907
Abstract: The passivation of the interface between Ge and the gate dielectric is a critical issue for the integration of Ge into next generation CMOS devices. GeO2 has recently garnered a lot of interest, but there is always a trade-off between low interface state densities and a low equivalent oxide thickness. In this paper we investigate the S-passivation of the Ge gate stack in which only 1 monolayer of S is needed in order to improve the interface properties of the gate stack. S-passivation is achieved via exposure of the clean Ge(100) surface to H2S. The high-k dielectric is deposited via atomic layer deposition. We show that the oxidant precursor type (H2O versus O-3) will result not only in different growth behavior but also in different interface properties. The H2O based process results in low defect densities at the valence bandedge, whereas the O-3 based process results in low defect densities at the conduction bandedge. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622514]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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