Title: Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Authors: Leonelli, Daniele ×
Vandooren, A
Rooyackers, R
De Gendt, Stefan
Heyns, Marc
Groeseneken, Guido #
Issue Date: Nov-2011
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:65-66 pages:28-32
Conference: 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC) Seville, SPAIN, SEP 14-16, 2010
Abstract: We show the impact of process parameters on the electrical performance of complementary Multiple-Gate Tunnel Field Effect Transistors (MuGTFETs), implemented in a Multiple-Gate Field Effect Transistors (MuGFETs) technology compatible with standard CMOS processing. Firstly, we assess the impact of the gate oxide thickness on the tunneling performance. Secondly, we investigate the effect of the doping concentration and profile by implementing different doping conditions. Thirdly, three different annealing conditions are compared: spike anneal, sub-ms laser anneal and low temperature anneal for Solid Phase Epitaxy Regrowth (SPER). In case of SPER anneal a record drive current of 46 mu A/mu m at V-DD of -1.2 V and I-OFF of 5 pA/mu m for Si pTFETs is reported. The enhanced current is given by the position of the suicide at the n+ side close to the gate. Silicide engineering opens a new opportunity to optimize tunnel devices. (C) 2011 Elsevier Ltd. All rights reserved.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
ESAT - MICAS, Microelectronics and Sensors
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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