Title: Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Authors: Afanas'ev, Valeri ×
Chou, Hsing-Yi
Houssa, Michel
Stesmans, Andre
Lamagna, L
Lamperti, A
Molle, A
Vincent, B
Brammertz, G #
Issue Date: Oct-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:99 issue:17 pages:-
Article number: 172101
Abstract: By analyzing energy barriers for electrons at interfaces of Ge, GaAs, and In0.15Ga0.85As with insulating high-permittivity oxides (HfO2, ZrO2) using the spectroscopy of internal photoemission, we found that the insertion of a nanometer-thin interlayer of a dissimilar semiconductor, i.e., Si on Ge or Ge on GaAs, has no measurable influence on the interface band alignment. This result indicates the absence of any substantial interface dipoles across the stack composed of a semiconductor heterojunction and an insulating oxide and suggests the validity of the transitivity rule previously inferred on the basis of bulk-density-of-states arguments in the case of nanometer-sized multilayer structures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3655470]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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