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Title: Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects
Authors: Adelmann, C ×
Swerts, Jan
Richard, O
Conard, T
Popovici, M
Meersschaut, J
Afanas'ev, Valeri
Breuil, L
Cacciato, A
Opsomer, K
Brijs, B
Tielens, H
Pourtois, G
Bender, H
Jurczak, M
Van Houdt, Jeroen
Van Elshocht, S
Kittl, Jorge #
Issue Date: 2011
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:158 issue:8 pages:H778-H784
Abstract: The lanthanide aluminates GdAlO3 and LuAlO3 have been examined for integration into advanced non-volatile memory devices. From a materials point of view, a number of physical properties of the material need to be understood prior to successful device integration, such as e. g. band gap, dielectric permittivity, or crystallization behavior. In addition to these material properties, the layers may have to withstand high thermal budgets during device processing such that thermal stability and interdiffusion in contact with surrounding materials become important. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3596557] All rights reserved.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Laboratory for Cytogenetics and Genome Research
Department of Imaging & Pathology - miscellaneous
× corresponding author
# (joint) last author

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