A new HF vapor process for native oxide removal, suited for cluster applications
Storm, AB × Sprey, H Maes, JW Granneman, E de Blank, R Rohl, E Caymax, M Heyns, Marc #
Diffusion and Defect Data B, Solid State Phenomena vol:65-6 pages:225-228
An HF vapor process with acetic acid (CH3COOH) as catalyst is presented. Etched thermal oxide thickness is determined as a function of time, acetic acid and KF pressure. The process is very reproducible and relative insensitive to hydrocarbon contamination. Native oxide is completely removed after an equivalent etched thermal oxide thickness of 3 nm. The results with respect to repeatability, uniformity, selectivity and throughput are sufficient for a large number of device applications. This makes the process highly suited for clustering with subsequent CVD processes.