High purity silicon v vol:98 issue:13 pages:258-263
Electrochemical Society Series
5th Symposium on High Purity Silicon at the 194th Meeting of the Electrochemical Society location:Boston, MA, USA date:2-6 November 1998
The yield and reliability of MOS capacitors has been evaluated for different oxide thicknesses and different < 100 > p-Si substrates. It is shown that the mechanism of breakdown due to substrate defects is not constant for varying oxide thicknesses. For ultra-thin gate oxides the extrinsic field-dependent breakdown is less suitable to measure the substrate quality. Sacrificial oxidation was found to lead to slightly improved intrinsic charge-to-breakdown values in the case of Czochralski grown wafers.