5th Symposium on High Purity Silicon at the 194th Meeting of the Electrochemical Society, Date: 1998/11/02 - 1998/11/06, Location: Boston, MA, USA
Publication date:
1998-01-01
Volume:
98
Pages:
258 -
263
ISSN:
1-56677-207-9
Publisher:
Electrochemical Society Inc; 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA
High purity silicon v
Author:
Bearda, Twan
Vanhellemont, Jan ; Mertens, Paul ; Heyns, Marc ; Claeys, CL ; RaiChoudhury, P ; Watanabe, M ; Stallhofer, P ; Dawson, HJ
Keywords:
Science & Technology, Physical Sciences, Electrochemistry
Abstract:
The yield and reliability of MOS capacitors has been evaluated for different oxide thicknesses and different < 100 > p-Si substrates. It is shown that the mechanism of breakdown due to substrate defects is not constant for varying oxide thicknesses. For ultra-thin gate oxides the extrinsic field-dependent breakdown is less suitable to measure the substrate quality. Sacrificial oxidation was found to lead to slightly improved intrinsic charge-to-breakdown values in the case of Czochralski grown wafers.