Title: Effect of substrate defects on GOI of ultra-thin gate oxides
Authors: Bearda, TR
Vanhellemont, J
Mertens, PW
Heyns, Marc #
Issue Date: 1998
Publisher: Electrochemical Society Inc
Host Document: High purity silicon v vol:98 issue:13 pages:258-263
Series Title: Electrochemical Society Series
Conference: 5th Symposium on High Purity Silicon at the 194th Meeting of the Electrochemical Society location:Boston, MA, USA date:2-6 November 1998
Abstract: The yield and reliability of MOS capacitors has been evaluated for different oxide thicknesses and different < 100 > p-Si substrates. It is shown that the mechanism of breakdown due to substrate defects is not constant for varying oxide thicknesses. For ultra-thin gate oxides the extrinsic field-dependent breakdown is less suitable to measure the substrate quality. Sacrificial oxidation was found to lead to slightly improved intrinsic charge-to-breakdown values in the case of Czochralski grown wafers.
ISBN: 1-56677-207-9
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
# (joint) last author

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