Title: Integration of high-k gate dielectrics - Wet etch, cleaning and surface conditioning
Authors: De Gendt, Stefan
Beckx, S
Caymax, M
Claes, M
Conard, T
Delabie, Annelies
Deweerd, W
Hellin, David
Kraus, H
Onsia, B
Parashiv, V
Puurunen, Riika Liisa
Rohr, E
Snow, J
Tsai, W
Van Doorne, P
Van Elshocht, Sven
Vertommen, J
Witters, T
Heyns, Marc #
Issue Date: 2004
Publisher: Electrochemical society inc
Host Document: Cleaning technology in semiconductor device manufacturing viii vol:2003 issue:26 pages:67-77
Conference: 8th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing held at the 2003 Fall Meeting of the Electrochemical Society location:Orlando, Florida, USA date:October 2003
Abstract: For decades, IC manufacturing has been relying on Si-based materials especially for the critical front-end-of-line processes. Driven by scaling requirements, the gate dielectric will have to be replaced by materials with a higher dielectric constant. These 'metaloxide' materials pose certain concerns on contamination control. Further, interface preparation (or cleaning) of the silicon substrates prior to high-k deposition is an emerging field, as the quality of the deposited layer and the scaling potential critically depend on these steps. Finally, also the selective removal of these materials after gate stack patterning is considered.
ISBN: 1-56677-411-X
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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