ITEM METADATA RECORD
Title: Gas-phase surface processing prior to 3.2 nm gate oxidation
Authors: Ruzyllo, J ×
Rohr, E
Baeyens, M
Bearda, T
Mertens, P
Heyns, Marc #
Issue Date: 1999
Publisher: Sci-Tech Publications
Series Title: Diffusion and Defect Data B, Solid State Phenomena vol:65-6 pages:85-88
Abstract: The pre-gate oxidation processing of Si surfaces involving an SCI clean followed by a sequence of gas-phase low pressure exposures to AHF/methanol, UV/Cl-2, and UV/O-2 is investigated. A comparison with a wet clean shows inferior performance of the dry chemistries in terms of Ca removal and surface roughness (Rms= 0.07 nm and 0.31 respectively). In spite of these apparent deficiencies the 3.2 nm thick gate oxides grown on dry cleaned surfaces are displaying electrical characteristics, particularly charge-to-breakdown, comparable to oxides grown on the wet cleaned surfaces. The possible reasons for this effect are considered.
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science