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Title: Crystallisation and tetragonal-monoclinic transformation in ZrO2 and HfO2 dielectric thin films
Authors: Zhao, C ×
Roebben, Gert
Heyns, M
Van der Biest, Omer #
Issue Date: 2002
Publisher: Trans Tech Publications
Series Title: Key Engineering Materials vol:206-2 pages:1285-1288
Host Document: KEY ENGINEERING MATERIALS
Conference: 7th Conference of the European Ceramic Society location:Brugge, Belgium date:9-13 September 2001
Abstract: The crystallisation and the tetragonal-to-monoclinic phase transformation in ZrO2 and HfO2 thin films prepared by atomic layer chemical vapour deposition (ALCVD) are studied using high-temperature grazing-incidence X-ray diffraction (HT-XRD). These films are developed for applications as high-k dielectric gate in CMOS transistors. HT-XRD shows that all the tested samples have a crystallisation onset temperature below 600 degreesC, The crystallisation onset temperature depends not only on the material, but also on the film thickness, The thinner a film is, the higher is the crystallisation onset temperature. For a film with the same thickness, HfO2 crystallises at a higher temperature than ZrO2. The phase composition of the crystallised films depends also on the material and film thickness. In ZrO2, the tetragonal phase is more stable than in HfO2. The t-m transformation during annealing has been observed.
ISBN: 0-87849-882-6
ISSN: 1013-9826
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Metallurgy and Materials Engineering - miscellaneous
Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

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