Vos, R × Lux, M Meuris, M Mertens, P Heyns, Marc Ramage, R #
Diffusion and Defect Data B, Solid State Phenomena vol:65-6 pages:279-282
In this paper, the amount of metals deposited from photoresist, developer and edge-bead remover is reported after typical lithography processing in order to determine meaningful specifications for the purity of these chemicals. Of particular concern are the metals that cannot be cleaned by a typical wet clean after resist ashing: i.e. mobile ions as Cu, K ... are found to difuse into a Si/SiO2 interface. Critical metal specifications for these ions hence depend upon plasma conditions and temperature during the ashing process.