Title: Ozonated HF applications in a spray processing tool
Authors: Claes, M
Rohr, E
De Gendt, S
Lagrange, S
Bergman, E
Heyns, Marc #
Issue Date: 2002
Publisher: Electrochemical society inc
Host Document: Cleaning technology in semiconductor device manufacturing vii, proceedings vol:2002 issue:26 pages:314-321
Series Title: Electrochemical Society Series
Conference: 7th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing location:San Francisco, CA date:September 2001
Abstract: A HydrOzone(TM) process combined with an ozone-HF step, applied in. a spray-processing tool, is feasible in removing both resist and post-etch polymer. residue's after polysilicon,etch,on CMOS and NVM wafers. With this method, the chemical use and process time are reduced significantly. In. addition, this HydrOzone(TM) process extended with an ozone-HF step provides an effective comprehensive pre-gate clean: with no significant adverse impact of surface roughness on the gate oxide properties.
ISBN: 1-56677-359-8
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
# (joint) last author

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