7th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing location:San Francisco, CA date:September 2001
A HydrOzone(TM) process combined with an ozone-HF step, applied in. a spray-processing tool, is feasible in removing both resist and post-etch polymer. residue's after polysilicon,etch,on CMOS and NVM wafers. With this method, the chemical use and process time are reduced significantly. In. addition, this HydrOzone(TM) process extended with an ozone-HF step provides an effective comprehensive pre-gate clean: with no significant adverse impact of surface roughness on the gate oxide properties.