Title: Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
Authors: De Gendt, Stefan
Kerber, A
Kubicek, S
Niwa, M
Pantisano, L
Puurunen, Riika Liisa
Ragnarsson, L
Schram, T
Shimamoto, Y
Tsai, W
Rohr, E
Van Elshocht, Sven
Vandervorst, Wilfried
Witters, T
Young, E
Zhao, Chunlan
Heyns, Maureen #
Issue Date: 2004
Publisher: Electrochemical society inc
Host Document: Physics and technology of high-k gate dielectrics ii vol:2003 issue:22 pages:267-275
Series Title: Electrochemical Society Series
Conference: 2nd International Symposium on High Dielectrics Constant Materials location:Orlando, Florida, USA date:12-16 October 2003
Abstract: In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO2-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.
ISBN: 1-56677-405-5
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
Associated Section of ESAT - INSYS, Integrated Systems
Nuclear and Radiation Physics Section
# (joint) last author

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