Physics and technology of high-k gate dielectrics ii vol:2003 issue:22 pages:267-275
Electrochemical Society Series
2nd International Symposium on High Dielectrics Constant Materials location:Orlando, Florida, USA date:12-16 October 2003
In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO2-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.