2nd International Symposium on High Dielectrics Constant Materials, Date: 2003/10/12 - 2003/10/16, Location: Orlando, Florida, USA
Publication date:
2004-01-01
Volume:
2003
Pages:
267 -
275
ISSN:
1-56677-405-5
Publisher:
Electrochemical society inc; 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA
Physics and technology of high-k gate dielectrics ii
Author:
De Gendt, Stefan
Kerber, A ; Kubicek, S ; Niwa, M ; Pantisano, L ; Puurunen, Riika Liisa ; Ragnarsson, L ; Schram, T ; Shimamoto, Y ; Tsai, W ; Rohr, E ; Van Elshocht, Sven ; Vandervorst, Wilfried ; Witters, T ; Young, E ; Zhao, Chunlan ; Heyns, Maureen
Abstract:
In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO2-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.