Title: Physical characterization of HfO2 deposited on Ge substrates by MOCVD
Authors: Van Elshocht, Sven
Brijs, B
Caymax, M
Conard, T
De Gendt, Stefan
Kubicek, S
Meuris, M
Onsia, B
Richard, O
Teerlinck, I
Van Steenbergen, J
Zhao, Chunlan
Heyns, Maureen #
Issue Date: 2004
Publisher: Materials research society
Host Document: Integration of advanced micro-and nanoelectronic devices-critical issues and solutions vol:811 pages:163-168
Series Title: Materials Research Society Symposium Proceedings
Conference: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting location:San Francisco, CA, USA date:13-16 April 2004
Abstract: Germanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically unstable, preventing formation of the gate dielectric by simple oxidation. At present, high-k dielectrics might be considered as an enabling, technology as much progress has been made in the deposition of thin high-quality layers.
ISBN: 1-55899-761-X
ISSN: 0272-9172
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
# (joint) last author

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