Integration of advanced micro-and nanoelectronic devices-critical issues and solutions vol:811 pages:163-168
Materials Research Society Symposium Proceedings
Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting location:San Francisco, CA, USA date:13-16 April 2004
Germanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically unstable, preventing formation of the gate dielectric by simple oxidation. At present, high-k dielectrics might be considered as an enabling, technology as much progress has been made in the deposition of thin high-quality layers.