Title: Screening the high-k layer quality by means of open circuit potential analysis and wet chemical etching
Authors: Claes, M
De Gendt, S
Witters, T
Kaushik, V
Chen, J
Conard, T
Delabie, Annelies
Van Elshocht, Sven
Heyns, Marc #
Issue Date: 2003
Publisher: Materials Research Society
Host Document: Novel materials and processes for advanced cmos vol:745 pages:15-20
Series Title: Materials Research Society Symposium Proceedings
Conference: Symposium on Novel Materials and Processes for Advanced CMOS held at the 2002 MRS Fall Meeting location:Boston, MA, USA date:2-4 December 2002
Abstract: A fast way to monitor the quality of high-k dielectric layers is wet etching, either monitored by Open Circuit Potential analysis or by Scanning Electron Microscopy. Defect densities in the order of 1.10(9) defects/cm(2) are observed for as-deposited HfO2 layers. It is assumed that the mechanism for wet chemical defect observation is either due to crystallization and/or due to an oxygen deficient HfO2 layer resulting in Si/SiO up-diffusion upon thermal treatment. However, after appropriate post deposition annealing wet etch defect free layers can be prepared.
ISBN: 1-55899-682-6
ISSN: 0272-9172
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
# (joint) last author

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