Novel materials and processes for advanced cmos vol:745 pages:15-20
Materials Research Society Symposium Proceedings
Symposium on Novel Materials and Processes for Advanced CMOS held at the 2002 MRS Fall Meeting location:Boston, MA, USA date:2-4 December 2002
A fast way to monitor the quality of high-k dielectric layers is wet etching, either monitored by Open Circuit Potential analysis or by Scanning Electron Microscopy. Defect densities in the order of 1.10(9) defects/cm(2) are observed for as-deposited HfO2 layers. It is assumed that the mechanism for wet chemical defect observation is either due to crystallization and/or due to an oxygen deficient HfO2 layer resulting in Si/SiO up-diffusion upon thermal treatment. However, after appropriate post deposition annealing wet etch defect free layers can be prepared.