Title: Selective wet etching of HF-based layers
Authors: Claes, M
Paraschiv, V
Boutkabout, Hakim
Witters, T
De Gendt, Stefan
Rohr, E
Coenegrachts, B
Vertommen, J
Richard, O
Lindsay, R
Boullart, W
Heyns, Maureen #
Issue Date: 2004
Publisher: Electrochemical society inc
Host Document: Physics and Technology of High-k Gate Dielectrics ii vol:2003 issue:22 pages:165-174
Series Title: Electrochemical Society
Conference: 2nd International Symposium on High Dielectrics Constant Materials location:Orlando, Florida, USA date:12-16 October 2003
Abstract: From an integration point of view, selective removal of high-k layers, whether this is done dry or wet, holds big challenges with respect to silicon recess. We developed a procedure to selectively remove high-k material from source/drain areas in devices without significant recess (less than or equal to 1nm). The approach involves a treatment of annealed CVD Hf-based films, followed by a selective wet removal. The treatment is actually a high-k layer damage by either ion bombardment from a plasma or ion implantation at low energies. After damaging, the high-k layer is removed selective towards most other layers exposed during processing. The developed chemistry is an HF-based wet chemical solution.
ISBN: 1-56677-405-5
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
# (joint) last author

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