Analytical and diagnostic techniques for semiconductor materials, devices, and processes vol:2003 issue:3 pages:252-259
Electrochemical Society Series
Symposium on Analytical Techniques for Semiconductor Materials and Process Characterization IV (ALTECH 2003) held at the 203rd Meeting of the Electrochemical Society location:Paris, France date:27 April-2 May 2003
ZrO2-Al2O3 laminate layers deposited using atomic layer chemical vapor deposition (ALCVD) have been studied with a high temperature grazing incidence X-ray diffraction spectrometer (GIXRD). In the diffraction spectra, a sharp, intense peak due to the constructive interference of the X-ray beams reflected by the interfaces between neighboring laminae has been observed. From the position and intensity of the peak, a series of information on the laminate structure has been obtained. By comparing the structures of the layers deposited using different recipes, the deposition rate of Al2O3 on ZrO2 and that of ZrO2 on Al2O3 have been estimated. By observation of the in-situ peak shift during high-temperature measurement, the volume change (expansion or shrinkage) of the laminae has been studied. The miscibility of ZrO2 and Al2O3 has been also studied using the high temperature XRD and ATRFTIR technique.