Title: Alternative channel materials for MOS devices
Authors: Heyns, Marc
Adelmann, Christoph
Brammertz, Guy
Brunco, David
Caymax, Matty
De Jaeger, Brice
Delabie, Annelies
Eneman, Geert
Houssa, Michel
Lin, Dennis
Martens, Koen
Merckling, Clement
Meuris, Marc
Mittard, Jerome
Penaud, Julien
Pourtois, Geoffrey
Scarrozza, Marco
Simoen, Eddy
Sioncke, Sonja
Wang, Wei-E #
Issue Date: 2008
Publisher: Ieee
Host Document: 2008 ieee Silicon Nanoelectronics Workshop pages:1-2
Conference: IEEE Silicon Nanoelectronics Workshop (SNW 2008) location:Honolulu, HI, date:15-16 June 2008
Abstract: The introduction of high mobility channel materials together with new device structures with improved subthreshold slope provides a pathway into continuing the performance scaling of CMOS technology beyond the classical Si roadmap. The combination of Ge pMOS devices with nMOS devices made on very high electron mobility III/V compounds such as InGaAs can be achieved by selective growth on a Si-wafer. The key challenge towards achieving excellent device performance is the electrical passivation of the interface between the high-kappa dielectric and the alternative channel materials.
ISBN: 978-1-4244-2071-1
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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