Title: Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge
Authors: Pantisano, L
Trojman, Lionel
Mitard, Jerome
DeJaeger, B
Severi, S
Eneman, Geert
Crupi, G
Hoffmann, T
Ferain, Isabelle
Meuris, M
Heyns, M #
Issue Date: 2008
Publisher: Ieee
Host Document: 2008 Symposium on VLSI Technology pages:41-42
Conference: Symposium on VLSI Technology location:Honolulu, HI, USA date:17-19 June 2008
Abstract: A novel RFCV-technique is applied to directly quantify the short channel devices at high V-ds, enabling parameter extraction like velocity saturation and critical field. This technique is applied to benchmark Si(110) and Si(100) as well as Ge devices. Similarities and crucial differences between short channel parameters in Si and Ge are discussed.
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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