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Title: High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
Authors: Caymax, M
Bender, H
Brijs, B
Conard, T
De Gendt, S
Delabie, Annelies
Heyns, Maureen
Onsia, B
Ragnarsson, L
Richard, O
Vandervorst, Wilfried
Van Elshocht, Sven
Zhao, Chunlan
Maes, JW
Date, L
Pique, D
Young, E
Tsai, W
Shimamoto, Y #
Issue Date: 2003
Publisher: Materials research society
Host Document: Comos front-end materials and process technology vol:765 pages:47-58
Series Title: Materials Research Society Symposium Proceedings
Conference: Symposium on CMOS Front-End Materials and Process Technology held at the MRS Spring Meeting location:San Francisco, CA, USA date:22-24 April 2003
Abstract: In the quest for ever smaller transistor dimensions, the well-known and reliable SiO2 gate dielectric material needs to be replaced by alternatives whith higher dielectric constants in order to reduce the gate leakage. Candidate materials are metal oxides such as HfO2 The most promising deposition techniques, next to Physical Vapor Deposition, appear to be ALCVD and MOCVD. In this paper, we compare the most important characteristics of layers from both proces techniques and assess their relevance to gate stack applications: density, crystallisation, impurities, growth mechanism, interfacial layers, dielectric constant, mobility. Although we find some minor differences, layers from both techniques mostly show striking similarities in many aspects, both positive and negative.
ISBN: 1-55899-702-4
ISSN: 0272-9172
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
Nuclear and Radiation Physics Section
# (joint) last author

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