2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers pages:99-100
International Symposium on VLSI Technology, Systems and Applications location:Hsinchu, Taiwan date:25-27 April 2005
We show for the first time that full Ni silicidation (Ni-FUSI) of poly gates in combination with Hf based gate dielectrics meets the required device performance for the 65nm LSTP technology node. Important device parameters, like C-inv, mobility and drive currents exhibit significant improvement without compromising the oxide integrity and reliability. The drive of nMOS and pMOS transistors for the V-DD = 1.1V at 10pA/mu m off state leakage is 575 mu A/mu m and 1650 mu A/mu m respectively.