In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapor deposition
De Witte, H Passefort, S Besling, W Maes, JH Eason, K Young, E Heyns, Marc #
Electrochemical society inc
Proceedings Rapid Thermal and Other Short-time Processing Technologies III vol:2002 issue:11 pages:153-160
Electrochemical Society Series
International Symposium on Rapid Thermal and Other Short-Time Processing Technologies III location:Philadelphia, PA, USA date:13-16 May 2002
The use of the KLA Tencor Quantox in-line electrical metrology tool for evaluation and characterization of Atomic Layer Chemical Vapor Deposition ALCVD(TM) high k dielectrics has been investigated. Equivalent Oxide Thickness obtained from Quantox agrees very well with High Frequency Capacitance - Voltage, C-V, results. Also the Quantox ACTIV(TM) Index parameter shows nice correlation with CV J(gate). Therefore Quantox can be used as fast and much less expensive evaluation tool for optimization of ALCVD(TM) process conditions and process stability monitoring.