ITEM METADATA RECORD
Title: In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapor deposition
Authors: De Witte, H
Passefort, S
Besling, W
Maes, JH
Eason, K
Young, E
Heyns, Marc #
Issue Date: 2002
Publisher: Electrochemical society inc
Host Document: Proceedings Rapid Thermal and Other Short-time Processing Technologies III vol:2002 issue:11 pages:153-160
Series Title: Electrochemical Society Series
Conference: International Symposium on Rapid Thermal and Other Short-Time Processing Technologies III location:Philadelphia, PA, USA date:13-16 May 2002
Abstract: The use of the KLA Tencor Quantox in-line electrical metrology tool for evaluation and characterization of Atomic Layer Chemical Vapor Deposition ALCVD(TM) high k dielectrics has been investigated. Equivalent Oxide Thickness obtained from Quantox agrees very well with High Frequency Capacitance - Voltage, C-V, results. Also the Quantox ACTIV(TM) Index parameter shows nice correlation with CV J(gate). Therefore Quantox can be used as fast and much less expensive evaluation tool for optimization of ALCVD(TM) process conditions and process stability monitoring.
ISBN: 1-56677-334-2
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Department of Materials Engineering - miscellaneous
# (joint) last author

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